As technology nodes shrink, end users are designing systems where each chip element is being targeted for a specific technology and manufacturing node. While designing chip functionality to address ...
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Once considered quality problems, substrate defects now enable precise control of semiconductor crystal growth
A team led by researchers at Rensselaer Polytechnic Institute (RPI) has made a breakthrough in semiconductor development that could reshape the way we produce computer chips, optoelectronics and ...
Ajinomoto build-up film (ABF) substrate has been a key component in chip manufacturing since its introduction shortly before the turn of the millennium. Substrates made with Ajinomoto build-up film – ...
ALBANY, N.Y.--(BUSINESS WIRE)--SEMATECH announced today that researchers have reached a significant milestone in reducing tool-generated defects from multi-layer deposition of mask blanks used for ...
Creating two-dimentional materials large enough to use in electronics is a challenge despite huge effort but now, Penn State researchers have discovered a method for improving the quality of one class ...
Two-dimensional (2D) materials have emerged as a significant class of materials promising for photocatalysis, and defect ...
Skoltech researchers have patented a method that enables producing arbitrarily shaped functional graphene components on a transparent substrate with 100-nanometer resolution, which hold much promise ...
The growth of GaN-on-silicon substrate was first reported in the early-1970s (T. L. Chu et al., J. Electrochemical Society, Vol. 118, page 1200), since the early 1990s more and more academics and ...
Silicon carbide (SiC) is a wide-bandgap semiconductor material utilized in high-power, high-temperature, and high-frequency electronic devices. 4H-SiC substrates have distinct characteristics, ...
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